School

University of WaterlooDepartment

Electrical and Computer EngineeringCourse Code

ECE331Professor

C.R.SelvakumarLecture

1ECE 331 Lab 1 Report

By Wei, He / Zi, Li

Pre-Lab

4.4 Estimation of Oxide Thickness

a) Estimate the thickness of the oxide on wafer 1 using the graph in figure 11.

Wafer 1 has wet growth at 1100 degrees Celsius and 50 minutes, judging by figure 11, its thickness of

oxide is approximately 0.65µm.

b)Estimate the thickness of the oxide on wafer 2 using the graph in figure 11.

Wafer 2 has wet growth at 1100 degrees Celsius and 36 minutes, judging by figure 11, its thickness of

oxide is approximately 0.5μm.

c)Estimate the thickness of the oxide on wafer 3 using the graph in figure 11.

Since wafer 3 has the combined oxide formed from step 1 and 4, its thickness is approximately the

sum of oxide formed in step 1 and 4. Thus its thickness is approximately to be 1.15μm.

4.5 Carrier Type by Hot Probe

a) With the hot probe apparatus, the voltmeter will read a positive voltage for Vh-Vc if the material is

n-type, and a negative voltage for Vh-Vc if the material is p - type. Why?

In n-type material, each impurity atom donates an electron, and thereby becomes a positively charged

ion; Electrons are majority carriers and when point h is heated, electron flows from point h to c, what

is left out in point h is holes, which has a positive polarity. Thus the voltage at point h should be

bigger than point c, Vh - Vc is a positive value. In p-type material, the majority carrier is holes.

Holes flows from point h to c, what is left at h is electrons, which has a negative polarity. Thus

voltage at h is smaller than c, the voltmeter shows a negative value for Vh - Vc.

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###### Document Summary

4. 4 estimation of oxide thickness: estimate the thickness of the oxide on wafer 1 using the graph in figure 11. Wafer 1 has wet growth at 1100 degrees celsius and 50 minutes, judging by figure 11, its thickness of oxide is approximately 0. 65 m. b)estimate the thickness of the oxide on wafer 2 using the graph in figure 11. Wafer 2 has wet growth at 1100 degrees celsius and 36 minutes, judging by figure 11, its thickness of oxide is approximately 0. 5 m. c)estimate the thickness of the oxide on wafer 3 using the graph in figure 11. Since wafer 3 has the combined oxide formed from step 1 and 4, its thickness is approximately the sum of oxide formed in step 1 and 4. Thus its thickness is approximately to be 1. 15 m.

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