ECE331 Lecture Notes - Lecture 1: He Zi, Charge Carrier, Voltmeter
20 Jan 2016
School
Department
Course
Professor
Document Summary
4. 4 estimation of oxide thickness: estimate the thickness of the oxide on wafer 1 using the graph in figure 11. Wafer 1 has wet growth at 1100 degrees celsius and 50 minutes, judging by figure 11, its thickness of oxide is approximately 0. 65 m. b)estimate the thickness of the oxide on wafer 2 using the graph in figure 11. Wafer 2 has wet growth at 1100 degrees celsius and 36 minutes, judging by figure 11, its thickness of oxide is approximately 0. 5 m. c)estimate the thickness of the oxide on wafer 3 using the graph in figure 11. Since wafer 3 has the combined oxide formed from step 1 and 4, its thickness is approximately the sum of oxide formed in step 1 and 4. Thus its thickness is approximately to be 1. 15 m.
