CHM238Y1 Lecture Notes - Lecture 18: Silane, Aluminium Arsenide, Direct And Indirect Band Gaps
Document Summary
Note negligible kphoton << kv,c,ph kc = kv kc = kv+kph. Band gap engineering: trends in cubic uc parameters and eg, as a function of composition x for the solid solution ternary semiconductor alxga1-xas, mixing alas large and. Gaas small eg materials: a solid solution implies a random distribution of al and ga in the zinc blende type lattice, isomorphous substitution of al for ga without any change in the structure of the crystal unit cell. Quantum size effects in cdse direct bandgap semiconductor seen in the size dependence of the optical absorption, emission spectra with blue shifts with decreasing size of the nanocrystals !! Thermally induced chemical vapour deposition cvd of silane within the pores of a nanoporous silica creates encapsulated ncsi nsih4 ! Electrochemical anodic oxidation of p-doped si wafer in hf/h2o yields porous si framework made of luminescent ncsi quantum size effects causes blue shift with decreasing ncsi size.
