CSC258H1 Lecture Notes - Field-Effect Transistor, Depletion Region, Jfet
Document Summary
Transistors: using n-type/p-type doped semiconductors together form the basis, use the characteristics of p-n junctions to create more interesting of all transistors, for instance, the p-n junction: By placing a chuck of p-type material next to a chunk of n-tpe material and applying a voltage from one end to the other, we see different effects on the resulting current behavior, 3 main types. Metal oxide semiconductor field effect transistor (mosfet) Junction field effect transistor (jfet: mosfet & jfet same family, occasionally electron & empty space move around between p-type & Bipolar junction transistors (bjts) n-type diffusion of electrons and empty spaces. When diffusion occurs, resultant potassum now positivly b/c extra proton & boron now negatively charged: when a p-n junction is reverse biased, the electric field in the depletion layer prevents the electrons from getting through. Made up of positive potassum and negative borons. Inject electrons at high velocity, so they don"t have time to recombine.
