Question

Hello, this question is extremely important. Rating highestlevel, but you must answer all 5 parts of question to receive fullcredit. Please list all steps, graphs, etc as they’re needed andany intuition you used to complete problems. Thank you,

7. The Fermi level lies 0.522 eV above the valence band in a sampleof silicon at 300°K.

a) (3) Is this n-type or p-type material and why?
b) (1) Are the impurity atoms donors or acceptors?
c) (4) Find the majority carrier concentration
d) (8) Find the minority carrier concentration (2 ways)
e) (4) Find the concentration of impurity atoms
HINT for part e): Use the concentration formulas not the Fermilevel sinh"1 formula!

Formulas:

Semiconductor Summary

Nc (cm^-3) - Effective Density of States forelectrons

N_V (cm^-3) - EffectiveDensity of States for holes

n_i (cm^-3) - IntrinsicCarrier Concentration

n_n, p_p (cm^-3) -Majority Carrier Concentrations (electrons in n-type or holes inp-type)

n_p, p_n (cm^-3) -Minority Carrier Concentrations (electrons in p-type or holes inn-type)

N_D (cm^-3) - Donor DopingConcentration (density of donor atoms)

N_A (cm^-3) - Acceptor DopingConcentration (density of acceptor atoms)

E_F (eV) - Fermi level in extrinsicmaterial

E_Fi (eV) - Fermi level in intrinsicmaterial

	Silicon	Germanium
mn	1.1 me	0.55 me
mp	0.56 me	0.37 me
Eg	1.110 eV	0.67 eV
Nc	2.90 x 1019 cm-3	1.02 x 1019 cm-3
Nv	1.05 x 1019 cm-3	5.65 x 1018 cm-3
ni	1.0 x 1010 cm-3	1.8 x 1013 cm-3

At 300° K

	Silicon	Germanium
* mn	1.1 me	0.55 me
* mp	0.56 me	0.37 me
Eg	1.11 eV	0.67 eV
Nc	2.90 x 1019 cm-3	1.02 x 1019 cm-3
Nv	1.05 x 1019 cm-3	5.65 x 1018 cm-3
ni	1.0 x 1010 cm-3	1.8 x 1013 cm-3

At 300° K