COE 758 Midterm: COE758 - Fall 2000 Midterm (Solutions)
31 Jan 2019
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Ele 758 * digital systems engineering * midterm test * Circle the memory type based on electrically re-chargeable elements: cpu-registers; b) cache memory; c) main memory (dram), secondary memory devices (disk). Comments: dram cell is based on capacitor, which is electrically re-chargeable element. For 16 m x 32 bit sdram (64 mbyte simm): calculate number of simm pins used for address. Correct answer: number of address pins = _12_ Comments: number of dram cells = 16 m = 2 . 12 number of columns = number of rows = 2 . Column address lines = log 2 = 12: calculate an average word (32-bits) access time for above sdram if bus clock frequency = 200 mhz, bus width = 32 bits, block size to be transferred = 512. Bytes and the complete addressing period (ras + cas) = 20 c. c. (clock cycles). Correct answer: average word access time = __5. 78_ ns. Comments: latency (addressing period) + block delivery time.
