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lab report 2.pdf

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Department
Physics and Astronomy
Course
PHYS 3050
Professor
All Professors
Semester
Winter

Description
PHYS 3050 Lab Report V Introduction to Transistors Swapnil Agrawal 210049237 26th November 2009 Swapnil Agrawal - 210049237 Table of Contents 1. INTRODCTION 2 1. Background 2 2. Aim 2 3. Apparatus 2 2. ANALYSIS, CALCULATIONS AND OBSERVATIONS 3 1. Testing Transistors 3 2. DC Transistor Characteristics 3 3. SOURCES OF ERROR 7 4. CONCLUSION 7 5. REFERENCES 7 1 Swapnil Agrawal - 210049237 INTRODUCTION 1. Background The bipolar junction transistor (BJT), like the diode, utilizes the property of the PN junction in a semiconductor. Unlike the diode, the transistor is a three-port device (with the three ports referred to as the Base (B), Collector (C), and Emitter (E). The collector and the emitter regions are similarly doped (either p-type or n-type) while the base is oppositely doped. Hence there are two types of transistors - so called NPN and PNP transistors. 2. AIM The purpose of this experiment is for you to become familiar with the operating characteristics of the transistor. APPARATUS a) Agilent 33120A function/Arbitrary Waveform Generator b) Agilent 3630A Triple Output DC Power Supply c) Tektronix TDS200 Digital Storage Oscilloscope (DSO) d) Breadboard, Resistors and 2N3904 (NPN) 2N3906 (PNP) Transistor. 2 Swapnil Agrawal - 210049237 ANALYSIS, CALCULATIONS AND OBSERVATIONS 4.1 Testing Transistors The 2N3904 NPN Transistor was selected. The DMM was put in diode measure mode and values were measured across the BE and CB junction. The following values were observed on measurement: 1. 2N3904 NPN Transistor: CB = 0.674 V BE = 0.7 V Negative on Base = Open 2. 2N3906 PNP Transistor: CB = 0.694 V BE = 0.707 V Positive on Base = Open Transistor CB BE NPN Transistor 0.674 V 0.7 V PNP Transistor 0.694 V 0.707 V 4.2 DC Transistor Characteristics The following circuit was constructed using a NPN Transistor. +20V of DC power supply was used for V bb2and +6V for Vbb1. R b 47.02 kΩ R e 0.324 kΩ 3 Swapnil Agrawal - 210049237 a. E ,BV , andEV was measured for various values oCEV by varyingbb2or a fixed values of I . This entailed adjusting both and V . The measurement was performed for b bb2 bb1 values ofBI = 2 µA, 5 µ A, 10 µA. For b = 2.0 µA I V V V V I ß c b bb2 b e ce e 2.1 µA 0 V 0.1 V 0.02 mV 0.94 mV 0 mA -1 -0.0021 2.0 µA 0.10 V 94.0 mV 12.5 mV 90.7 mV 0.038 mA 18 0.036 2.0 µA 0.25 V 119.3 mV 92.4 mV 0.162 V 0.28 mA 139 0.278 2.0 µA 0.30 V 95.5 mV 97.7 mV 0.198 V 0.29 mA 144 0.288 2.0 µA 0.45 V 96.9 mV 110.2 mV 0.345 V 0.33 mA 164 0.328 2.0 µA 0.65 V 96.0 mV 109.4 mV 0.54 V 0.33 mA 164 0.328 2.0 µA 1.00 V 95.8 mV 109.7 mV 0.901 V 0.33 mA 164 0.328 2.0 µA 2.20 V 101.7 mV 110 mV 2.12 V 0.34 mA 169 0.338 2.0 µA 4.02 V 95.25 mV 110.5 mV 3.94 V 0.34 mA 169 0.338 2.0 µA 7.00 V 91.2 mV 107 mV 6.97 V 0.34 mA 169 0.328 2.0 µA 12.0 V 90.7 mV 107.7 mV 12 V 0.33 mA 164 0.328 2.0 µA 16.0 V 90.5 mV 108.5 mV 16.04 V 0.33 mA 164 0.328 2.0 µA 20.0 V 93.7 mV 109.3 mV 20.01 V 0.33 mA 164 0.328 For b = 5.0 µA I V V V V I ß c b bb2 b e ce e 5.1 µA 0.01 V 0.24 V 1.1 mV 17.6 mV 0.003 mA -0.41176 -0.0021 4.9 µA 0.15 V 0.23 V 51 mV 106 mV 0.16 mA 31.65306 0.1551 5.1 µA 0.35 V 0.24 V 0.186 V 0.162 V 0.57 mA 110.7447 0.5649 5.0 µA
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