EL ENG 130 Midterm: ee130-fa2006-mt2-Javey-exam
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The energy band diagram for an ideal mos-c operated with gate oxide thickness. Tox=0. 2 m at t = 300 k is sketched in the figure below. Note that the applied gate voltage causes band bending in the semiconductor such that ef = ei at the si-sio2 interface. Invoke the delta-depletion approximation as required in answering the questions that follow. [3 pts] sketch the electrostatic potential ( ) inside the semiconductor as a function of position. [3 pts] roughly sketch the electric field inside the oxide and semiconductor as a function of position. [3 pts] roughly sketch the electron concentration versus position in the semiconductor. [3 pts] what is the electron concentration at the si-sio2 interface? n = _______________cm. [6 pts] find the channel doping nd, surface potential s, and gate voltage vg. Consider two devices, one pn junction and one ms junction: The pn junction has a p-type si region with p=4. 96ev and an n-type region with.
