EL ENG 130 Study Guide - Final Guide: Three Sheets, Electronvolt, Work Function
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Department of e lectrical e ngineering and computer sciences. Print your name on the cover page clearly now. Show major intermediate steps on exam pages to facilitate grading. Make sure your copy of the exam paper has 12 pages (including cover page) 8. 85 10-14 f cm-1 m n s s e n k c i h. Permittivity of silicon (vgs + vt + 0. 2)/6toxe (mv/cm) (pfet) 2: e xplain the following in one or two sentences: (12pts. ) (a) why does larger idsat lead to smaller circuit (such as inverter) delays? (3pts. ) Increase the speed due to higher idsat (c) why can we not reduce vt to an arbitrarily low value? (3pts. ) Lower vt will have larger subthreshold leakage current => static power consumption increases. (d) assume the electron and hole mobilities are increased 10 times. Idsat increases due to enhanced mobility, the power consumption still remains identical. Consider a silicon n-channel mosfet with an unknown metal as gate material.
