Class Notes (838,348)
Canada (510,861)
York University (35,470)
ENG 2002 (7)
Lecture

Problem Sheet 4 Solutions.pdf

2 Pages
152 Views
Unlock Document

Department
Engineering
Course
ENG 2002
Professor
Hany E.Z.Farag
Semester
Winter

Description
ENG2002 Solutions to Chapter 8 problems on Semiconductors 10 3 1. In general, assume 10 free electrons / cm in Si at 300K. The thermal energy at 300K is 25 meV. But this is an average. Thus some small portion of electrons have energies greater than 1.1eV which allows them to break free of their bonds and leave the valence band for the conduction band. 2. There are 4 valence electrons in one Si atom. There are 10 Si atoms in cm . Thus 3 22 10 4x10 valence electrons. At room temperature, there are about 10 free electrons 3 10 22 in cm . So, 10 (free) electrons/4x10 (total valence) electrons = 1/4,000,000,000,000. 3. Doping adds electrons or holes, increasing the number of majority charge carriers. We assume that 100% of dopants contribute either an electron or a hole at room temperature. 4. n-type: Group V (phosphorous P, arsenic As, tin Sb) p-type: Group III (boron B, gallium Ga, indium In) 5. Number of atoms of pure Si/cm = 10 3 22 3 20 Number of dopant atoms in heavily doped Si/cm = 10
More Less

Related notes for ENG 2002

Log In


OR

Join OneClass

Access over 10 million pages of study
documents for 1.3 million courses.

Sign up

Join to view


OR

By registering, I agree to the Terms and Privacy Policies
Already have an account?
Just a few more details

So we can recommend you notes for your school.

Reset Password

Please enter below the email address you registered with and we will send you a link to reset your password.

Add your courses

Get notes from the top students in your class.


Submit