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18 Dec 2019
Germanium to which 5X1022 m-3 Boron (group III element) atoms areadded is to be used in a semiconductor device.
(a) Is this n-type or p-type semiconductor?
(b) Calculate its electrical conductivity at room temperatureassuming the electron and hole mobilities to be 0.1 and 0.05 m2/V-s, respectively.
(c) Electrical conductivity of an intrinsic (undoped) semiconductorat 400 K is 81.0 (?m)-1, and at 500 K is 717 (?m)-1. What is theband-gap energy for this material?
Germanium to which 5X1022 m-3 Boron (group III element) atoms areadded is to be used in a semiconductor device.
(a) Is this n-type or p-type semiconductor?
(b) Calculate its electrical conductivity at room temperatureassuming the electron and hole mobilities to be 0.1 and 0.05 m2/V-s, respectively.
(c) Electrical conductivity of an intrinsic (undoped) semiconductorat 400 K is 81.0 (?m)-1, and at 500 K is 717 (?m)-1. What is theband-gap energy for this material?
kemalziyad4Lv2
14 Feb 2022
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