We used the density of states in three dimensions to derive the carrier density. (a) Derive the one dimensional and (b) two dimensional density of states; also (c) derive the electron carrier densities for both.

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Bunny GreenfelderLv2

26 Jun 2019

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coralwildebeest865

Working on my fermi level project. Interested in determining theintrinsic carrier concentration of gallium nitride (GaN).

T=300; % Temperature in Kelvin
k=8.617e-5; % Boltzmann constant (eV/K)
e0=8.85e-14; % permittivity of free space (F/cm)
q=1.602e-19; % charge on an electron (coul)
KS=8.9; % Dielectric constant of GaN
ni=X; % intrinsic carrier conc. in Galium Nitride at 300K
EG=3.44 ; % Galium Nitride band gap (eV)

Could you show steps on how you calculated X?

Honestly, just give me a value and show me how you got there. Cutthe gibberish.
Its couple hours before sunrise.

Intrinsic carrier concentration:
ni = (NcÂ·Nv)^(1/2)*exp(-Eg/(2kBT))

Effective density of states in the conduction band: Nc
Zinc Blende
Nc = 2.3*(1e14)*T^(3/2) (cm-3)

Effective density of states in the valence band: Nv
Zinc Blende BN
Nv = 8.0*(1e15)*T^(3/2) (cm-3)

Helpful Source: http://www.ioffe.ru/SVA/NSM/Semicond

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We used the density of states in three dimensions to derive the carrier density. (a) Derive the one dimensional and (b) two dimensional density of states; also (c) derive the electron carrier densities for both.

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Physics: Principles with Applications

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