Increasing the band gap of an intrinsic semiconductor reduces the carrier concentration in conduction band true or false?
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Working on my fermi level project. Interested in determining theintrinsic carrier concentration of gallium nitride (GaN).T=300; % Temperature in Kelvink=8.617e-5; % Boltzmann constant (eV/K)e0=8.85e-14; % permittivity of free space (F/cm)q=1.602e-19; % charge on an electron (coul)KS=8.9; % Dielectric constant of GaNni=X; % intrinsic carrier conc. in Galium Nitride at 300KEG=3.44 ; % Galium Nitride band gap (eV)Could you show steps on how you calculated X?Honestly, just give me a value and show me how you got there. Cutthe gibberish.Its couple hours before sunrise.Intrinsic carrier concentration:ni = (NcรยทNv)^(1/2)*exp(-Eg/(2kBT))Effective density of states in the conduction band: NcZinc BlendeNc = 2.3*(1e14)*T^(3/2) (cm-3)Effective density of states in the valence band: NvZinc Blende BNNv = 8.0*(1e15)*T^(3/2) (cm-3)Helpful Source: http://www.ioffe.ru/SVA/NSM/Semicond
The more narrow band gap absorbs more light true or false ?
Pure silicon at room temperature has an electron number density ofabout 5 x 1015 m-3 and an equal density of holes in the valenceband. Suppose that one of every 106 silicon atoms is replaced by aphosphorus atom. (a) What charge carrier number density will thephosphorus add (in terms of nm-3)? (b) What is the ratio of thecharge carrier number density (electrons in the conduction band andholes in the valence band) in the doped silicon to that in puresilicon? The density of silicon is 2.33 g/cm3 and its molar mass is28.086 g/mol