PHYS 3000 Final: PHYS 3000 Final Exam 2012
Document Summary
The total number of marks on the paper is 100. If additional space is needed, use the backs of sheets but indicate clearly where your answer is continued: where appropriate, units must be included for answers to be considered complete. A list of useful formulae, a table of constants, and tables of semiconductor properties are attached at the end of the paper (last three pages). For your convenience, three particularly useful parameters are listed below. Relative permittivity (dielectric constant) for silicon: (cid:2035)si(cid:3404)11. 7 (cid:2035)sio2(cid:3404)3. 9 (cid:2035)si(cid:3404)11. 7. Relative permittivity (dielectric constant) for silicon dioxide: (cid:2035)sio2(cid:3404)3. 9. Intrinsic carrier concentration for silicon at 300 k: (cid:1866)(cid:3036), si(cid:3404)1. 5(cid:3400)10(cid:2869)(cid:2868) cm(cid:2879)(cid:2871) Thermal voltage (cid:4672)(cid:1848)(cid:3047)(cid:3404)(cid:3038)(cid:3021)(cid:3032)(cid:4673) at 300 k: (cid:1848)(cid:3047)(cid:4666)300 k(cid:4667)(cid:3404)0. 0259 v. Electron charge: (cid:1857)(cid:3404)1. 6(cid:3400)10(cid:2879)(cid:2869)(cid:2877) c (cid:1855)(cid:3404)2. 998(cid:3400)10(cid:2869)(cid:2868) cm/s b ac. The diagram to the right shows energy bands for a junction between gold and n-type silicon with a region of highly doped silicon at the interface. that. V 1. 5 m and that the electron affinity for si is.
