CHM ENG 179 Study Guide - Midterm Guide: Relative Permittivity, Semiconductor Device, Heat Flux

• School: Berkeley
• Department: Chemical & Biomolecular Engineering
• Course: CHM ENG 179
• Professor: all

Document Summary

5 pts. each: what is high k gate dielectric?". These are materials used to replace sio2 with high dielectric constant. Heat must be dissipated from currents/resistances in devices, including leakage currents. +2: write the expression for radiative heat flux, defining each term. Is emissivity, is stefan-boltzmann constant, t is absolute temperature. 1: what is the key dimensionless quantity in the deal-grove model? k. Sketch the o-species concentration profiles in each case. (a) reaction is rate-limiting step; diffusion is fast compared to reaction: o profile flat and nearly equal to o concentration at surface of sio2. +2. 5 (b) diffusion or mass transfer is rate-limiting; diffusion is slow compared to reaction; o profile linear with o concentration near 0 at si-sio2 interface. +2. 5: write the equation for mean speed in terms of the speed distribution function (hint: the integral form). v m.