EL ENG 105 Midterm: ee105-sp2008-mt2-Wu-soln
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Instructions: use the values of physical constants provided below, show your work. (make your methods clear to the grader!, clearly mark (underline or box) your answers, specify the units on answers whenever appropriate. Note that vt ln(10) = 0. 060 v at t=300k. Electron and hole mobilities in silicon at 300k. Problem 1 [20 points]: mos amplifiers: for this problem, use the following parameters for all nmos transistors: Vth = 0. 4 v, ncox = 200 a/v2, = 0. 1v-1, (w/l)1 = (w/l)2 = 10. Amplifier-b: find the small signal parameters for m1 and m2 (gm, r0). [2pts: find the voltage gain, input and output resistance of amplifier-a. You can make approximations in your expression as long as they a w ithin % cc racy. 10 a u p ] re (cid:1870) (cid:3404)(cid:3398)(cid:1859)(cid:3040)(cid:2869)(cid:4670)(cid:3042)(cid:2870)(cid:3397)(cid:4666)1(cid:3397)(cid:1859)(cid:3040) (cid:3042)(cid:2870) (cid:3042)(cid:2869) (cid:3404)(cid:3398)4126 (cid:1827)(cid:3049) [2pts: find the voltage gain, input and output resistance of amplifier-b. Show both the expressions and the numerical values.
