EL ENG 105 Midterm: ee105-sp2006-mt1-Wu-soln
Document Summary
Guidelines: closed book and notes, one-page information sheet allowed, there are some useful formulas in the end of the exam, the values of common parameters are listed at the beginning of next page. Please use the following parameters for all problems unless specified otherwise: N+ = 550 mv, p+ = -550 mv, vth = 26 mv. Si = 11. 7, sio2 = 3. 9, 0 = 8. 854 10-14 f/cm, q = 1. 6x10-19 c, ni = 1010 cm-3. (1) consider a silicon pn junction diode with an n-doping concentration of 1016 cm-3 and a p-doping concentration of 1018 cm-3. Their cross-sectional area of the diode is 100. Assume the reverse saturation current of the diode is 10-14 amp. Show the positions of all charges, and show the magnitude and polarity of the charges. (4) [10 pt] if the p+ gate of the mos capacitor in problem (2) is replaced by a metal whose electrostatic potential is 0v.
