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19 Nov 2019
An aluminum interconnect within a silicon microelectronic device has a hemispherical cross section with a radius of 0.5 µm and a length of 100 µm. What is its resistance at room temperature? The operating temperature of the device is 60 degrees C. Would the resistance of the interconnect increase, decrease, or stay the same? Briefly explain.
4. An aluminum interconnect within a silicon microelectronic device has a hemispherical cross section with a radius of 0.5 μm and a length of 100 μm. What is its resistance at room temperature? The operating temperature of the device is 60 â. Would the resistance of the interconnect increase, decrease, or stay the same? Briefly explain.
An aluminum interconnect within a silicon microelectronic device has a hemispherical cross section with a radius of 0.5 µm and a length of 100 µm. What is its resistance at room temperature? The operating temperature of the device is 60 degrees C. Would the resistance of the interconnect increase, decrease, or stay the same? Briefly explain.
4. An aluminum interconnect within a silicon microelectronic device has a hemispherical cross section with a radius of 0.5 μm and a length of 100 μm. What is its resistance at room temperature? The operating temperature of the device is 60 â. Would the resistance of the interconnect increase, decrease, or stay the same? Briefly explain.
Irving HeathcoteLv2
8 Mar 2019