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Hello, this question is extremely important. Rating highestlevel, but you must answer all 5 parts of question to receive fullcredit. Please list all steps, graphs, etc. as they're needed andany intuition you used to complete problems. Thank you,

8. An abrupt silicon p-n junction has NA = 2 x 10^14 cm^-3 on one side andND = 5 x 10^15 cm-3 on theother. At atemperature of 300°K

a) (4) Find the position of the Fermi levels in both the p and nregions
b) (4) Find the majority concentrations in each region
c) (4) Find the minority concentrations in each region
d) (4) Draw and label the equilibrium band diagram
e) (4) Determine the size of the potential "hill"

Semiconductor Summary

Nc (cm-3) - Effective Density ofStates for electrons

NV (cm-3) - EffectiveDensity of States for holes

ni (cm-3) - IntrinsicCarrier Concentration

nn, pp (cm-3) -Majority Carrier Concentrations (electrons in n-type or holes inp-type)

np, pn (cm-3) -Minority Carrier Concentrations (electrons in p-type or holes inn-type)

ND (cm-3) - Donor DopingConcentration (density of donor atoms)

NA (cm-3) - Acceptor DopingConcentration (density of acceptor atoms)

EF (eV) - Fermi level in extrinsicmaterial

EFi (eV) - Fermi level in intrinsicmaterial

Silicon

Germanium

mn

1.1 me

0.55 me

mp

0.56 me

0.37 me

Eg

1.110 eV

0.67 eV

Nc

2.90 x 1019 cm-3

1.02 x 1019 cm-3

Nv

1.05 x 1019 cm-3

5.65 x 1018 cm-3

ni

1.0 x 1010 cm-3

1.8 x 1013 cm-3

At 300° K

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