Hello, this question is extremely important. Rating highestlevel, but you must answer all 5 parts of question to receive fullcredit. Please list all steps, graphs, etc. as they're needed andany intuition you used to complete problems. Thank you,
8. An abrupt silicon pn junction has NA = 2 x 10^14 cm^3 on one side andND = 5 x 10^15 cm3 on theother. At atemperature of 300Â°K
a) (4) Find the position of the Fermi levels in both the p and nregions
b) (4) Find the majority concentrations in each region
c) (4) Find the minority concentrations in each region
d) (4) Draw and label the equilibrium band diagram
e) (4) Determine the size of the potential "hill"
Semiconductor Summary
Nc (cm^{3})  Effective Density ofStates for electrons
N_{V} (cm^{3})  EffectiveDensity of States for holes
n_{i} (cm^{3})  IntrinsicCarrier Concentration
n_{n}, p_{p} (cm^{3}) Majority Carrier Concentrations (electrons in ntype or holes inptype)
n_{p}, p_{n} (cm^{3}) Minority Carrier Concentrations (electrons in ptype or holes inntype)
N_{D} (cm^{3})  Donor DopingConcentration (density of donor atoms)
N_{A} (cm^{3})  Acceptor DopingConcentration (density of acceptor atoms)
E_{F} (eV)  Fermi level in extrinsicmaterial
E_{F}i (eV)  Fermi level in intrinsicmaterial
Silicon
Germanium
mn
1.1 me
0.55 me
mp
0.56 me
0.37 me
E_{g}
1.110 eV
0.67 eV
Nc
2.90 x 10^{19} cm^{3}
1.02 x 10^{19} cm^{3}
Nv
1.05 x 10^{19} cm^{3}
5.65 x 10^{18} cm^{3}
ni
1.0 x 10^{10} cm^{3}
1.8 x 10^{13} cm^{3}
At 300Â° K
Hello, this question is extremely important. Rating highestlevel, but you must answer all 5 parts of question to receive fullcredit. Please list all steps, graphs, etc. as they're needed andany intuition you used to complete problems. Thank you,
8. An abrupt silicon pn junction has NA = 2 x 10^14 cm^3 on one side andND = 5 x 10^15 cm3 on theother. At atemperature of 300Â°K
a) (4) Find the position of the Fermi levels in both the p and nregions
b) (4) Find the majority concentrations in each region
c) (4) Find the minority concentrations in each region
d) (4) Draw and label the equilibrium band diagram
e) (4) Determine the size of the potential "hill"
Semiconductor Summary
Nc (cm^{3})  Effective Density ofStates for electrons
N_{V} (cm^{3})  EffectiveDensity of States for holes
n_{i} (cm^{3})  IntrinsicCarrier Concentration
n_{n}, p_{p} (cm^{3}) Majority Carrier Concentrations (electrons in ntype or holes inptype)
n_{p}, p_{n} (cm^{3}) Minority Carrier Concentrations (electrons in ptype or holes inntype)
N_{D} (cm^{3})  Donor DopingConcentration (density of donor atoms)
N_{A} (cm^{3})  Acceptor DopingConcentration (density of acceptor atoms)
E_{F} (eV)  Fermi level in extrinsicmaterial
E_{F}i (eV)  Fermi level in intrinsicmaterial

At 300Â° K 