Question

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8. An abrupt silicon p-n junction has NA = 2 x 10^14 cm^-3 on one side andND = 5 x 10^15 cm-3 on theother. At atemperature of 300°K

a) (4) Find the position of the Fermi levels in both the p and nregions
b) (4) Find the majority concentrations in each region
c) (4) Find the minority concentrations in each region
d) (4) Draw and label the equilibrium band diagram
e) (4) Determine the size of the potential "hill"

Semiconductor Summary

Nc (cm^-3) - Effective Density ofStates for electrons

N_V (cm^-3) - EffectiveDensity of States for holes

n_i (cm^-3) - IntrinsicCarrier Concentration

n_n, p_p (cm^-3) -Majority Carrier Concentrations (electrons in n-type or holes inp-type)

n_p, p_n (cm^-3) -Minority Carrier Concentrations (electrons in p-type or holes inn-type)

N_D (cm^-3) - Donor DopingConcentration (density of donor atoms)

N_A (cm^-3) - Acceptor DopingConcentration (density of acceptor atoms)

E_F (eV) - Fermi level in extrinsicmaterial

E_Fi (eV) - Fermi level in intrinsicmaterial

	Silicon	Germanium
mn	1.1 me	0.55 me
mp	0.56 me	0.37 me
Eg	1.110 eV	0.67 eV
Nc	2.90 x 1019 cm-3	1.02 x 1019 cm-3
Nv	1.05 x 1019 cm-3	5.65 x 1018 cm-3
ni	1.0 x 1010 cm-3	1.8 x 1013 cm-3

At 300° K