If the Fermi energy of a silicon sample is uniformly 0.2 eV below the conduction band,
calculate:
a. Electron and hole densities
b. Doping concentration
Assume the bandgap is 1.12 eV, at room temperature and the effective density of states, Nc, is
2.86 x 1019 cm-3 and intrinsic carrier concentration is 9.65 x 109 cm-3.

If the Fermi energy of a Si sample is uniformly 0.2 eV below the conduction band, 
calculate: (i) the electron and hole densities, and (ii) Doping concentration. Assume the Si 
bandgap is 1.12 eV, the temperature is 300 K, and the effective density of states in the 
conduction band is 2.86 x 1019 cm-3.

Working on my fermi level project. Interested in determining theintrinsic carrier concentration of gallium nitride (GaN).

T=300; % Temperature in Kelvin
k=8.617e-5; % Boltzmann constant (eV/K)
e0=8.85e-14; % permittivity of free space (F/cm)
q=1.602e-19; % charge on an electron (coul)
KS=8.9; % Dielectric constant of GaN
ni=X; % intrinsic carrier conc. in Galium Nitride at 300K
EG=3.44 ; % Galium Nitride band gap (eV)

Could you show steps on how you calculated X?

Honestly, just give me a value and show me how you got there. Cutthe gibberish.
Its couple hours before sunrise.

Intrinsic carrier concentration:
ni = (Nc·Nv)^(1/2)*exp(-Eg/(2kBT))

Effective density of states in the conduction band: Nc
Zinc Blende
Nc = 2.3*(1e14)*T^(3/2) (cm-3)

Effective density of states in the valence band: Nv
Zinc Blende BN
Nv = 8.0*(1e15)*T^(3/2) (cm-3)

Helpful Source: http://www.ioffe.ru/SVA/NSM/Semicond

Hello, this question is extremely important. Rating highestlevel, but you must answer all 5 parts of question to receive fullcredit. Please list all steps, graphs, etc as they’re needed andany intuition you used to complete problems. Thank you,

7. The Fermi level lies 0.522 eV above the valence band in a sampleof silicon at 300°K.

a) (3) Is this n-type or p-type material and why?
b) (1) Are the impurity atoms donors or acceptors?
c) (4) Find the majority carrier concentration
d) (8) Find the minority carrier concentration (2 ways)
e) (4) Find the concentration of impurity atoms
HINT for part e): Use the concentration formulas not the Fermilevel sinh"1 formula!

Formulas:

Semiconductor Summary

Nc (cm^-3) - Effective Density of States forelectrons

N_V (cm^-3) - EffectiveDensity of States for holes

n_i (cm^-3) - IntrinsicCarrier Concentration

n_n, p_p (cm^-3) -Majority Carrier Concentrations (electrons in n-type or holes inp-type)

n_p, p_n (cm^-3) -Minority Carrier Concentrations (electrons in p-type or holes inn-type)

N_D (cm^-3) - Donor DopingConcentration (density of donor atoms)

N_A (cm^-3) - Acceptor DopingConcentration (density of acceptor atoms)

E_F (eV) - Fermi level in extrinsicmaterial

E_Fi (eV) - Fermi level in intrinsicmaterial