SOEN 228 Chapter Notes - Chapter 5a: Data Loss, And Gate, Dynamic Random-Access Memory
6 Jan 2016
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Memory system, 1-d, 2-d, & 2 - d setup. Maximum size determined by number of address lines: definition: address space = 2k. K is # of address of lines (width of mar) Transfer between main memory & cpu is performed by: mar (memory address register) & mdr (memory data register) Data retained despite power loss: ram (random access memory) Stored electrical charges are used to program eprom. To erase, charge is exposed to uv light (20 minutes process) Programmed & erased electrically (4-10ms to erase & program: only 10,000 cycles. Stores information statically as long as power is supplied. Stores data only for a few miliseconds before lost. Additional refresh circuitry required: refreshes memory contents, done by, reading & re-writing data from a group of memory locations. Memory map & design process (banks, etc. : determine # of memory chips required: a.
