PP230 Chapter Notes -David Gauthier, Thai Baht, Solomon Judah Loeb Rapoport
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8. An abrupt silicon p-n junction has NA = 2 x 10^14 cm^-3 on one side andND = 5 x 10^15 cm-3 on theother. At atemperature of 300°K
a) (4) Find the position of the Fermi levels in both the p and nregions
b) (4) Find the majority concentrations in each region
c) (4) Find the minority concentrations in each region
d) (4) Draw and label the equilibrium band diagram
e) (4) Determine the size of the potential "hill"
Semiconductor Summary
Nc (cm-3) - Effective Density ofStates for electrons
NV (cm-3) - EffectiveDensity of States for holes
ni (cm-3) - IntrinsicCarrier Concentration
nn, pp (cm-3) -Majority Carrier Concentrations (electrons in n-type or holes inp-type)
np, pn (cm-3) -Minority Carrier Concentrations (electrons in p-type or holes inn-type)
ND (cm-3) - Donor DopingConcentration (density of donor atoms)
NA (cm-3) - Acceptor DopingConcentration (density of acceptor atoms)
EF (eV) - Fermi level in extrinsicmaterial
EFi (eV) - Fermi level in intrinsicmaterial
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At 300° K |