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23 Nov 2019

A p-type semiconductor is produced by:

a) doping the host crystals with acceptor impurities
b) doping the host crystals with donor impurities
c) pure crystals of germanium
d) none of the above

I'm thinking A, but I'm not really sure...

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Deanna Hettinger
Deanna HettingerLv2
4 Oct 2019
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Related textbook solutions

Physics: Principles with Applications
7th Edition, 2013
Giancoli
ISBN: 9780321625922

Related questions

Hello, this question is extremely important. Rating highestlevel, but you must answer all 5 parts of question to receive fullcredit. Please list all steps, graphs, etc. as they're needed andany intuition you used to complete problems. Thank you,

8. An abrupt silicon p-n junction has NA = 2 x 10^14 cm^-3 on one side andND = 5 x 10^15 cm-3 on theother. At atemperature of 300°K

a) (4) Find the position of the Fermi levels in both the p and nregions
b) (4) Find the majority concentrations in each region
c) (4) Find the minority concentrations in each region
d) (4) Draw and label the equilibrium band diagram
e) (4) Determine the size of the potential "hill"

Semiconductor Summary

Nc (cm-3) - Effective Density ofStates for electrons

NV (cm-3) - EffectiveDensity of States for holes

ni (cm-3) - IntrinsicCarrier Concentration

nn, pp (cm-3) -Majority Carrier Concentrations (electrons in n-type or holes inp-type)

np, pn (cm-3) -Minority Carrier Concentrations (electrons in p-type or holes inn-type)

ND (cm-3) - Donor DopingConcentration (density of donor atoms)

NA (cm-3) - Acceptor DopingConcentration (density of acceptor atoms)

EF (eV) - Fermi level in extrinsicmaterial

EFi (eV) - Fermi level in intrinsicmaterial

Silicon

Germanium

mn

1.1 me

0.55 me

mp

0.56 me

0.37 me

Eg

1.110 eV

0.67 eV

Nc

2.90 x 1019 cm-3

1.02 x 1019 cm-3

Nv

1.05 x 1019 cm-3

5.65 x 1018 cm-3

ni

1.0 x 1010 cm-3

1.8 x 1013 cm-3

At 300° K

A. You.
B. The ball.
C. You and the ball.
D. None of the above.

I suspect it is C but I'm not sure.

Hello, this question is extremely important. Rating highestlevel, but you must answer all 5 parts of question to receive fullcredit. Please list all steps, graphs, etc as they’re needed andany intuition you used to complete problems. Thank you,

7. The Fermi level lies 0.522 eV above the valence band in a sampleof silicon at 300°K.

a) (3) Is this n-type or p-type material and why?
b) (1) Are the impurity atoms donors or acceptors?
c) (4) Find the majority carrier concentration
d) (8) Find the minority carrier concentration (2 ways)
e) (4) Find the concentration of impurity atoms
HINT for part e): Use the concentration formulas not the Fermilevel sinh"1 formula!

Formulas:

Semiconductor Summary

Nc (cm-3) - Effective Density of States forelectrons

NV (cm-3) - EffectiveDensity of States for holes

ni (cm-3) - IntrinsicCarrier Concentration

nn, pp (cm-3) -Majority Carrier Concentrations (electrons in n-type or holes inp-type)

np, pn (cm-3) -Minority Carrier Concentrations (electrons in p-type or holes inn-type)

ND (cm-3) - Donor DopingConcentration (density of donor atoms)

NA (cm-3) - Acceptor DopingConcentration (density of acceptor atoms)

EF (eV) - Fermi level in extrinsicmaterial

EFi (eV) - Fermi level in intrinsicmaterial

Silicon

Germanium

mn

1.1 me

0.55 me

mp

0.56 me

0.37 me

Eg

1.110 eV

0.67 eV

Nc

2.90 x 1019 cm-3

1.02 x 1019 cm-3

Nv

1.05 x 1019 cm-3

5.65 x 1018 cm-3

ni

1.0 x 1010 cm-3

1.8 x 1013 cm-3

At 300° K

Silicon

Germanium

*

mn

1.1 me

0.55 me

*

mp

0.56 me

0.37 me

Eg

1.11 eV

0.67 eV

Nc

2.90 x 1019 cm-3

1.02 x 1019 cm-3

Nv

1.05 x 1019 cm-3

5.65 x 1018 cm-3

ni

1.0 x 1010 cm-3

1.8 x 1013 cm-3

At 300° K

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