A Si sample at 300 K contains acceptor impurity concentration of NA =1016 cm-3. 
Determine the concentration of donor impurity atoms that must be added so that the Si is ntype and the Fermi energy is 0.20 eV below the conduction band edge?

Hello, this question is extremely important. Rating highestlevel, but you must answer all 5 parts of question to receive fullcredit. Please list all steps, graphs, etc as they’re needed andany intuition you used to complete problems. Thank you,

7. The Fermi level lies 0.522 eV above the valence band in a sampleof silicon at 300°K.

a) (3) Is this n-type or p-type material and why?
b) (1) Are the impurity atoms donors or acceptors?
c) (4) Find the majority carrier concentration
d) (8) Find the minority carrier concentration (2 ways)
e) (4) Find the concentration of impurity atoms
HINT for part e): Use the concentration formulas not the Fermilevel sinh"1 formula!

Formulas:

Semiconductor Summary

Nc (cm^-3) - Effective Density of States forelectrons

N_V (cm^-3) - EffectiveDensity of States for holes

n_i (cm^-3) - IntrinsicCarrier Concentration

n_n, p_p (cm^-3) -Majority Carrier Concentrations (electrons in n-type or holes inp-type)

n_p, p_n (cm^-3) -Minority Carrier Concentrations (electrons in p-type or holes inn-type)

N_D (cm^-3) - Donor DopingConcentration (density of donor atoms)

N_A (cm^-3) - Acceptor DopingConcentration (density of acceptor atoms)

E_F (eV) - Fermi level in extrinsicmaterial

E_Fi (eV) - Fermi level in intrinsicmaterial

A p-type semiconductor is produced by:

a) doping the host crystals with acceptor impurities
b) doping the host crystals with donor impurities
c) pure crystals of germanium
d) none of the above

I'm thinking A, but I'm not really sure...

A p-type semiconductor is produced by

A) doping the host crystals with acceptor impurities

B) doping the host crystals with donor impurities

C) pure crystals of germanium

D) none of the above

please explain then select answ.